Curing Process on Passivation Layer for Backside-Illuminated CMOS Image Sensor Application

We fabricated Al/Al 2 O xmlns:xlink="http://www.w3.org/1999/xlink">3 /SiO /Si and Al/HfO structures to optimize the passivation layer of a backside-illuminated (BSI) complementary metal oxide semiconductor (CMOS) image sensor (CIS), with key properties newly developed high- $k$ analyzed via border traps, interface fixed charges. In first experiment using Al bilayer-based structures, different thicknesses SiO were applied from 0 15 nm. The improvement in their was confirmed by applying forming gas annealing (FGA), type post-treatment, all experimental systems. results indicated that both FGA effective for chemical passivation. However, tradeoff occurred degree trap density ( notation="LaTeX">$\text{D}_{\mathrm {it}}$ ) fixed-charge notation="LaTeX">$\text{Q}_{\mathrm {f}}$ according thickness. Subsequently, second HfO single-layer-based improved relatively poor extent compared experiment. Nevertheless, electrical characteristics films without any side effects optimal notation="LaTeX">$\vert \text{Q}_{\mathrm {f}}/\text{q}\vert $ values notation="LaTeX">$2.59 \times 10^{11}$ eV notation="LaTeX">$^{-1}$ cm notation="LaTeX">$^{-2}$ notation="LaTeX">$1.00 10^{12}$ , respectively, demonstrating its potential BSI CIS applications.